Method for producing an optoelectronic device comprising light-emitting diodes which are homogeneous in dimensions
US11894413B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2019 |
| Grant date | Feb 6, 2024 |
| Priority date | — |
| Expiry date | Oct 9, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/813
Abstract
A method for manufacturing an optoelectronic device including the steps of forming a substrate having a support face; forming a first series of first areas adapted to the formation of all or part of light-emitting diodes, forming a second series of second areas on the support face, adapted to the formation of light confinement wall elements capable of forming a light confinement wall, the second areas defining therebetween sub-pixel areas; forming, from the first areas, light-emitting diodes; forming, by the same technique as in the previous step, from the second areas, light confinement wall elements, concomitantly with all or part of the light-emitting diodes which are formed in the previous step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.