Resonant tunneling devices including two-dimensional semiconductor materials and methods of detecting physical properties using the same
US11894469B2 · kind B2 · utility
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Key dates
| Filing date | Mar 6, 2020 |
| Grant date | Feb 6, 2024 |
| Priority date | — |
| Expiry date | May 26, 2042 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y10/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A resonant tunneling device includes a first two-dimensional semiconductor layer including a first two-dimensional semiconductor material, a first insulating layer on the first two-dimensional semiconductor layer; and a second two-dimensional semiconductor layer on the first insulating layer and including a second two-dimensional semiconductor material of a same kind as the first two-dimensional semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.