Memory structure and manufacturing method for the same
US11895841B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2021 |
| Grant date | Feb 6, 2024 |
| Priority date | — |
| Expiry date | Aug 19, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/683
Abstract
A memory structure and a manufacturing method for the same are provided. The memory structure includes a charge trapping layer, a first silicon oxynitride tunneling film and a second silicon oxynitride tunneling film. The first silicon oxynitride tunneling film is between the charge trapping layer and the second silicon oxynitride tunneling film. A first atom concentration ratio of a concentration of a nitrogen atom to a total concentration of an oxygen atom and the nitrogen atom of the first silicon oxynitride tunneling film is 10% to 50%. A second atom concentration ratio of a concentration of a nitrogen atom to a total concentration of an oxygen atom and the nitrogen atom of the second silicon oxynitride tunneling film is 1% to 15%. The concentration of the nitrogen atom of the second silicon oxynitride tunneling film is lower than that of the first silicon oxynitride tunneling film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.