Chi-Pin Lu
19Patents
2h-index
24Co-inventors
50Inventor score
Filing activity: Oct 12, 2005 → Jun 10, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8581322B2 | Nonvolatile memory device and method for making the same | Electricity | 3 | Active |
| US10954129B2 | Diamond-like carbon as mandrel | Electricity | 3 | Active |
| US7927660B2 | Method of manufacturing nano-crystalline silicon dot layer | Electricity | 2 | Active |
| US7531411B2 | Apparatus and method for a non-volatile memory structure comprising a multi-layer silicon-rich, silicon nitride trapping layer | Electricity | 2 | Active |
| US10181475B2 | Three-dimensional non-volatile memory and manufacturing method thereof | Electricity | 2 | Active |
| US7521321B2 | Method of fabricating a non-volatile semiconductor memory device | Electricity | 2 | Active |
| US7544616B2 | Methods of forming nitride read only memory and word lines thereof | Electricity | 1 | Active |
| US7749838B2 | Fabricating method of non-volatile memory cell | Electricity | 1 | Active |
| US7863132B2 | Method for fabricating a charge trapping memory device | Electricity | 0 | Active |
| US7834382B2 | Nitride read-only memory cell and method of manufacturing the same | Electricity | 0 | Active |
| US8373218B2 | Nitride read-only memory cell and method of manufacturing the same | Electricity | 0 | Active |
| US7875926B2 | Non-volatile memory cell | Electricity | 0 | Active |
| US12408342B2 | Memory device with multi-layered charge storage stack | Electricity | 0 | Active |
| US10056395B2 | Method of improving localized wafer shape changes | Electricity | 0 | Active |
| US11749532B2 | Methods and apparatus for processing a substrate | Electricity | 0 | Active |
| US8183618B2 | Method for fabricating a charge trapping memory device | Electricity | 0 | Active |
| US11895841B2 | Memory structure and manufacturing method for the same | Electricity | 0 | Active |
| US11508617B2 | Method of forming interconnect for semiconductor device | Electricity | 0 | Active |
| US10714494B2 | 3D memory device with silicon nitride and buffer oxide layers and method of manufacturing the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.