Patent · US Active

Method of forming vanadium nitride-containing layer

US11898243B2 · kind B2 · utility

0Cited by

2,214References

14Claims

0Family size

Assignee

ASM IP Holding B.V. · NL

Inventors

Pia Homm Jara · Leuven, BE
Werner Knaepen · Leuven, BE
Dieter Pierreux · Dilbeek, BE
Bert Jongbloed · Oud-Heverlee, BE
Panagiota Arnou · Leuven, BE
Ren-Jie Chang · Leuven, BE
Qi Xie · Wilsele, BE
Giuseppe Alessio Verni · Ottignies, BE
Gido Van Der Star · Leuven, BE

Key dates

Filing date	Dec 7, 2020
Grant date	Feb 13, 2024
Priority date	—
Expiry date	Dec 5, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76876
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

Methods of forming a vanadium nitride-containing layer comprise providing a substrate within a reaction chamber of a reactor and depositing a vanadium nitride-containing layer onto a surface of the substrate, wherein the deposition process comprises providing a vanadium precursor to the reaction chamber and providing a nitrogen precursor to the reaction chamber.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.