Manufacturing method of semiconductor device and semiconductor processing system
US11899368B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Aug 9, 2022 |
| Grant date | Feb 13, 2024 |
| Priority date | — |
| Expiry date | Aug 9, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing a semiconductor device is as below. An exposed photoresist layer is developed using a developer supplied by a developer supplying unit. An ammonia gas by-product of the developer is discharged through a gas outlet of the developer supplying unit into a treating tool. The ammonia gas by-product is retained in the treating tool. A concentration of the ammonia gas by-product is monitored.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.