Stochastic-aware lithographic models for mask synthesis
US11900042B2 · kind B2 · utility
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Key dates
| Filing date | Nov 9, 2021 |
| Grant date | Feb 13, 2024 |
| Priority date | — |
| Expiry date | Mar 20, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70625
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In some aspects, a mask pattern is accessed. The mask pattern is for use in a lithography process that prints a pattern on a wafer. The mask pattern is applied as input to a deterministic model of the lithography process to predict a characteristic of the printed pattern. The deterministic model is deterministic, but it accounts for local stochastic variations of the characteristic in the printed pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.