Method and device for depositing silicon onto substrates
US11901179B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2021 |
| Grant date | Feb 13, 2024 |
| Priority date | — |
| Expiry date | Dec 30, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming a layer on a substrate includes providing a substrate in a reactor of a semiconductor processing system, the reactor having a divider separating an upper chamber from a lower chamber and a substrate holder therein, the substrate having upper and lower surfaces. The wafer is positioned within the reactor using the substrate holder such that the upper surface bounds the upper chamber, a silicon-containing gas is flowed through the upper chamber to deposit a layer of the upper surface, and a halogen-containing gas is flowed through the lower chamber to etch a deposited film on at least one wall bounding the lower chamber while flowing the silicon-containing gas through the upper chamber. Semiconductor processing systems are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.