Atomic layer etching method and semiconductor device manufacturing method using the same
US11901191B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 26, 2021 |
| Grant date | Feb 13, 2024 |
| Priority date | — |
| Expiry date | Mar 9, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An atomic layer etching method capable of precisely etching a metal thin film at units of atomic layer from a substrate including the metal thin film, includes forming a metal layer on a substrate, and etching at least a portion of the metal layer. The etching at least a portion of the metal layer includes at least one etching cycle. The at least one etching cycle includes supplying an active gas onto the metal layer, and supplying an etching support gas after supplying the active gas. The etching support gas is expressed by the following general formula wherein each of R1, R2, R3, R4 and R5 independently includes hydrogen or a C1-C4 alkyl group, and N is nitrogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.