Bilayer seal material for air gaps in semiconductor devices
US11901220B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 23, 2020 |
| Grant date | Feb 13, 2024 |
| Priority date | — |
| Expiry date | Sep 13, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a method for forming a semiconductor device includes forming an opening between first and second sidewalls of respective first and second terminals. The first and second sidewalls oppose each other. The method further includes depositing a first dielectric material at a first deposition rate on top portions of the opening and depositing a second dielectric material at a second deposition rate on the first dielectric material and on the first and second sidewalls. The second dielectric material and the first and second sidewalls entrap a pocket of air. The method also includes performing a treatment process on the second dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.