Method for manufacturing an optoelectronic device with self-aligning light confinement walls
US11901482B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2019 |
| Grant date | Feb 13, 2024 |
| Priority date | — |
| Expiry date | Jul 23, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8514
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The manufacture of an optoelectronic device includes the formation of light-emitting diodes where each one has a wire form, the formation of spacing walls made of a first dielectric material transparent to the light radiation originating from the diodes. The lateral sidewalls of each diode are surrounded by spacing walls. Light confinement walls are made of a second material adapted to block the light radiation originating from the diodes. The light confinement walls directly cover the lateral sidewalls of the spacing walls by being in contact with the wherein. A thin layer of the second material is deposited so as to directly cover the lateral sidewalls of the spacing walls by being in contact with the wherein and cover the upper border of the light-emitting diodes. The empty spaces delimited between the spacing walls at the level of the areas between the light-emitting diodes are also filled by the thin layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.