Memory devices and methods of forming the same
US11903334B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 2021 |
| Grant date | Feb 13, 2024 |
| Priority date | — |
| Expiry date | Jan 20, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/841
Abstract
A method of forming a memory device includes the following operations. A first conductive plug is formed within a first dielectric layer over a substrate. A treating process is performed to transform a portion of the first conductive plug into a buffer layer, and the buffer layer caps the remaining portion of the first conductive plug. A phase change layer and a top electrode are sequentially formed over the buffer layer. A second dielectric layer is formed to encapsulate the top electrode and the underlying phase change layer. A second conductive plug is formed within the second dielectric layer and in physical contact with the top electrode. A filamentary bottom electrode is formed within the buffer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.