Jer-Fu Wang
15Patents
1h-index
14Co-inventors
51Inventor score
Filing activity: Jun 14, 2004 → May 21, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7337586B2 | Anti-seismic device with vibration-reducing units arranged in parallel | Fixed Constructions | 10 | Expired |
| US11929115B2 | Memory device with SRAM cells assisted by non-volatile memory cells and operation method thereof | Physics | 1 | Active |
| US12356600B2 | SRAM memory cell device comprising ferroelectric access and storage transistors | Physics | 0 | Active |
| US12396176B2 | 3T memory with enhanced speed of operation and data retention | Electricity | 0 | Active |
| US11664279B2 | Multiple threshold voltage implementation through lanthanum incorporation | Electricity | 0 | Active |
| US12035532B2 | Memory array and memory device | Electricity | 0 | Active |
| US12424492B2 | Self-aligned contact for embedded memory | Electricity | 0 | Active |
| US12243619B2 | Memory array structure | Electricity | 0 | Active |
| US11903334B2 | Memory devices and methods of forming the same | Electricity | 0 | Active |
| US12402327B2 | Memory devices and methods of forming the same | Electricity | 0 | Active |
| US12426519B2 | Memory devices | Electricity | 0 | Active |
| US12069970B2 | Memory device, method for configuring memory cell in N-bit memory unit, and memory array | Physics | 0 | Active |
| US12022752B2 | Methods of forming memory devices | Electricity | 0 | Active |
| US11605779B2 | Memory cell, method of forming the same, and semiconductor die | Electricity | 0 | Active |
| US11854594B2 | Data processing method, data processing circuit, and computing apparatus | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.