Gas quench for diffusion bonding
US11905583B2 · kind B2 · utility
0Cited by
4References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 9, 2021 |
| Grant date | Feb 20, 2024 |
| Priority date | — |
| Expiry date | Jun 9, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Exemplary methods of cooling a semiconductor component substrate may include heating the semiconductor component substrate to a temperature of greater than or about 500° C. in a chamber. The semiconductor component substrate may be or include aluminum. The methods may include delivering a gas into the chamber. The gas may be characterized by a temperature below or about 100° C. The methods may include cooling the semiconductor component substrate to a temperature below or about 200° C. in a first time period of less than or about 1 minute.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.