Method of CMP integration for improved optical uniformity in advanced LCOS back-plane
US11908678B2 · kind B2 · utility
0Cited by
13References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 14, 2021 |
| Grant date | Feb 20, 2024 |
| Priority date | — |
| Expiry date | Jan 14, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/47573
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Processing methods may be performed to form a filled contact hole in a mirror layer of a semiconductor substrate. The method may include forming a contact hole through a mirror layer of the semiconductor substrate by an etch process. The method may include filling the contact hole with a fill material. A portion of the fill material may overlie the mirror layer. The method may also include removing a portion of the fill material external to the contact hole by chemical mechanical polishing landing on the mirror layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.