Semiconductor device
US11908759B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2021 |
| Grant date | Feb 20, 2024 |
| Priority date | — |
| Expiry date | Sep 26, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/157
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate, a body structure and an electronic component. The body structure is disposed above the substrate and includes a semiconductor die, a molding compound, a conductive component and a lower redistribution layer (RDL). The semiconductor die has an active surface. The molding compound encapsulates the semiconductor die and has a lower surface, an upper surface opposite to the lower surface and a through hole extending to the upper surface from the lower surface. The conductive component is formed within the through hole. The lower RDL is formed on the lower surface of the molding compound, the active surface of the semiconductor die and the conductive component exposed from the lower surface. The electronic component is disposed above the upper surface of the molding compound and electrically connected to the lower RDL through the conductive component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.