Light emitting diodes containing deactivated regions and methods of making the same
US11908974B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2022 |
| Grant date | Feb 20, 2024 |
| Priority date | — |
| Expiry date | Apr 28, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light emitting device (LED) includes an n-doped semiconductor material layer, an active region including an optically active compound semiconductor layer stack configured to emit light located on the n-doped semiconductor material layer, a p-doped semiconductor material layer located on the active region, an anode contact contacting the p-doped semiconductor material layer, a reflector overlying and electrically connected to the anode contact, and a device-side bonding pad layer located on the reflector. The p-doped semiconductor material layer includes an electrically active region that is at least partially covered by the anode contact and an inactive region that an electrical conductivity less than 30% of the electrically active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.