Method and apparatus for modulating film uniformity
US11913113B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2018 |
| Grant date | Feb 27, 2024 |
| Priority date | — |
| Expiry date | Oct 3, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for processing a substrate is provided, wherein the substrate is located below a showerhead in a processing chamber. A deposition layer is deposited on the substrate, wherein at least one deposition gas is provided through the showerhead. A secondary purge gas is flowed during the depositing the deposition layer from a location outside of the showerhead in the processing chamber forming a flow curtain around an outer edge of the showerhead, wherein the secondary purge gas comprises at least one component gas. A partial pressure of the at least one component gas is changed over time during the depositing the deposition layer, wherein the depositing the deposition layer has a non-uniformity, wherein the changing the partial pressure changes the non-uniformity over time during the depositing the deposition layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.