Magnetoresistive random access memory structure
US11917923B2 · kind B2 · utility
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Key dates
| Filing date | Apr 28, 2021 |
| Grant date | Feb 27, 2024 |
| Priority date | — |
| Expiry date | Feb 9, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
Abstract
A magnetoresistive random access memory (MRAM) structure, including a substrate and multiple MRAM cells on the substrate, wherein the MRAM cells are arranged in a memory region adjacent to a logic region. An ultra low-k (ULK) layer covers the MRAM cells, wherein the surface portion of ultra low-k layer is doped with fluorine, and dents are formed on the surface of ultra low-k layer at the boundaries between the memory region and the logic region.
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