Method and system for reticle enhancement technology
US11921420B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2023 |
| Grant date | Mar 5, 2024 |
| Priority date | — |
| Expiry date | Jan 20, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/22
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Methods incorporate variable side wall angle (VSA) into calculated patterns, using a mask 3D (M3D) effect. Embodiments include inputting a mask exposure information, calculating a mask 2D (M2D) effect from the mask exposure information, and determining the M3D effect from the M2D effect. Determining the M3D effect may include determining the VSA, such as by using a neural network. Embodiments may include determining a dose margin from mask exposure information; calculating a VSA using the dose margin; and calculating a pattern on a substrate using the calculated VSA, wherein calculating the pattern on the substrate includes a mask 3D effect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.