Patent · US Active

Read/write method and memory device

US11922023B2 · kind B2 · utility

0Cited by
6References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 9, 2020
Grant dateMar 5, 2024
Priority date
Expiry dateSep 4, 2041

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C29/44
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A read/write method includes: applying a read command to a memory device, the read command pointing to address information, reading to-be-read data from a storage cell corresponding to the address information to which the read command points, and if an error occurs in the to-be-read data, storing the address information to which the read command points in a preset storage space. The read/write operation is not performed on the address information stored in the preset storage space when the user executes the read or write operation on the memory device, which avoids a data error or data loss and greatly improves the reliability and prolongs the service life of the memory device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.