Semiconductor device
US11923422B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2020 |
| Grant date | Mar 5, 2024 |
| Priority date | — |
| Expiry date | Jun 2, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A semiconductor device includes a substrate, an initial layer, and a superlattice stack. The initial layer is located on the substrate and includes aluminum nitride (AlN). The superlattice stack is located on the initial layer and includes a plurality of first films, a plurality of second films and at least one doped layer, and the first films and the second films are alternately stacked on the initial layer, wherein the at least one doped layer is arranged in one of the first films and the second films, and dopants of the at least one doped layer are selected from a group consisting of carbon, iron, and the combination thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.