Channel structures having protruding portions in three-dimensional memory device and method for forming the same

US11925019B2 · kind B2 · utility

Assignee

• YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

• Wanbo Geng · 红钢城街道, CN
• Lei Xue · 红钢城街道, CN
• Xiaoxin Liu · 红钢城街道, CN
• Tingting Gao · 红钢城街道, CN

Key dates

• Filing date: Dec 10, 2020
• Grant date: Mar 5, 2024
• Expiry date: Aug 24, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/10

Abstract

A three-dimensional (3D) memory device includes a memory stack including conductive layers and dielectric layers interleaving the conductive layers, and a channel structure extending through the memory stack along a vertical direction. The channel structure has a plurality of protruding portions protruding along a lateral direction and facing the conductive layers, respectively, and a plurality of normal portions facing the dielectric layers, respectively, without protruding along the lateral direction. The channel structure includes a plurality of blocking structures in the protruding portions, respectively, and a plurality of storage structures in the protruding portions and over the plurality of blocking structures, respectively. A vertical dimension of each of the blocking structures is nominally the same as a vertical dimension of a respective one of the storage structures over the blocking structure.