High retention storage layer using ultra-low RA MgO process in perpendicular magnetic tunnel junctions for MRAM devices
US11925125B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Jan 23, 2022 |
| Grant date | Mar 5, 2024 |
| Priority date | — |
| Expiry date | Mar 7, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/329
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The disclosure provides a magnetic random access memory element. The magnetic random access memory element includes a magnetic reference layer, a magnetic free layer, and a non-magnetic barrier layer between the magnetic free layer and the magnetic reference layer. The magnetic random access memory element further includes a MgO layer contacting the magnetic free layer. The MgO layer includes multiple homogeneous layers of MgO that provide excellent interfacial perpendicular magnetic anisotropy to the magnetic free layer while also having a low RA.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.