Memory device with SRAM cells assisted by non-volatile memory cells and operation method thereof
US11929115B2 · kind B2 · utility
1Cited by
4References
20Claims
0Family size
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Key dates
| Filing date | Apr 8, 2022 |
| Grant date | Mar 12, 2024 |
| Priority date | — |
| Expiry date | Jul 30, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/221
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device and an operation method thereof are provided. The memory device includes memory cells, each having a static random access memory (SRAM) cell and a non-volatile memory cell. The SRAM cell is configured to store complementary data at first and second storage nodes. The non-volatile memory cell is configured to replicate and retain the complementary data before the SRAM cell loses power supply, and to rewrite the replicated data to the first and second storage nodes of the SRAM cell after the power supply of the SRAM cell is restored.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.