Parallel-connected trench capacitor structure with multiple electrode layers and method of fabricating the same
US11929213B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2020 |
| Grant date | Mar 12, 2024 |
| Priority date | — |
| Expiry date | Feb 17, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/85
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A structure of capacitors connected in parallel includes a substrate. A trench embedded in the substrate. Numerous electrode layers respectively conformally fill in and cover the trench. The electrode layers are formed of numerous nth electrode layers, wherein n is a positive integer from 1 to M, and M is not less than 3. The nth electrode layer with smaller n is closer to the sidewall of the trench. When n equals to M, the Mth electrode layer fills in the center of the trench, and the top surface of the Mth electrode is aligned with the top surface of the substrate. A capacitor dielectric layer is disposed between the adjacent electrode layers. A first conductive plug contacts the nth electrode layer with odd-numbered n. A second conductive plug contacts the nth electrode layer with even-numbered n.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.