Patent · US Active

Semiconductor device including trench structure and manufacturing method

US11929397B2 · kind B2 · utility

0Cited by

4References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Thomas Basler · Riemerling, DE
Caspar Leendertz · Munich, DE
Hans-Joachim Schulze · Taufkirchen, DE

Key dates

Filing date	Jan 25, 2022
Grant date	Mar 12, 2024
Priority date	—
Expiry date	Jan 25, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/62
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes: a silicon carbide semiconductor body having a source region of a first conductivity type and a body region of a second conductivity type; and a trench structure extending from a first surface into the silicon carbide semiconductor body along a vertical direction, the trench structure having a gate electrode and a gate dielectric. The trench structure is stripe-shaped and runs along a longitudinal direction that is perpendicular to the vertical direction. The source region includes a first source sub-region and a second source sub-region alternately arranged along the longitudinal direction. A doping concentration profile of the first source sub-region along the vertical direction differs from a doping concentration profile of the second source sub-region along the vertical direction. A corresponding method of manufacturing the semiconductor device is also described.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.