Semiconductor device structure with metal gate stack
US11929413B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 22, 2022 |
| Grant date | Mar 12, 2024 |
| Priority date | — |
| Expiry date | Jul 22, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/014
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a first channel structure and a second channel structure over a substrate. The semiconductor device structure also includes a first gate stack over the first channel structure, and the first gate stack has a first width. The semiconductor device structure further includes a second gate stack over the second channel structure. The second gate stack has a protruding portion extending away from the second channel structures. The protruding portion of the second gate stack has a second width, and half of the first width is greater than the second width.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.