Erase power loss indicator (EPLI) implementation in flash memory device
US11935603B2 · kind B2 · utility
0Cited by
7References
20Claims
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Key dates
| Filing date | Jan 11, 2022 |
| Grant date | Mar 19, 2024 |
| Priority date | — |
| Expiry date | Apr 14, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5646
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory has an array of non-volatile memory cells, first reference word lines and second reference word lines, and sense amplifiers. The sense amplifiers read system data, that has been written to supplemental non-volatile memory cells of the first reference word lines, using comparison of the supplemental non-volatile memory cells of the first reference word lines to supplemental non-volatile memory cells of the second reference word lines. Status of erasure of the non-volatile memory cells of the array is determined based on reading the system data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.