Boron nitride for mask patterning
US11935751B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 2021 |
| Grant date | Mar 19, 2024 |
| Priority date | — |
| Expiry date | May 19, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/332
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Exemplary deposition methods may include delivering a boron-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the boron-containing precursor and the nitrogen-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the boron-containing precursor or the nitrogen-containing precursor may be greater than or about 2:1. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a boron-and-nitrogen material on a substrate disposed within the processing region of the semiconductor processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.