Integrated circuit structure with backside dielectric layer having air gap
US11935781B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2022 |
| Grant date | Mar 19, 2024 |
| Priority date | — |
| Expiry date | Jul 28, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/013
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit (IC) structure includes a gate structure, a source epitaxial structure, a drain epitaxial structure, a front-side interconnection structure, a backside dielectric layer, and a backside via. The source epitaxial structure and the drain epitaxial structure are respectively on opposite sides of the gate structure. The front-side interconnection structure is on a front-side of the source epitaxial structure and a front-side of the drain epitaxial structure. The backside dielectric layer is on a backside of the source epitaxial structure and a backside of the drain epitaxial structure and has an air gap therein. The backside via extends through the backside dielectric layer to a first one of the source epitaxial structure and the drain epitaxial structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.