Methods for inhibiting line bending during conductive material deposition, and related apparatus
US11935782B2 · kind B2 · utility
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22Claims
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Key dates
| Filing date | Mar 7, 2022 |
| Grant date | Mar 19, 2024 |
| Priority date | — |
| Expiry date | May 21, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a structure comprises forming a pattern of elongate features extending vertically from a base structure. Conductive material is formed on the elongate features. After completing the forming of the pattern of elongate features, the elongate features, the conductive material, or both is (are) exposed to at least one surface treatment gas. The at least one surface treatment gas comprises at least one species formulated to diminish attractive or cohesive forces at a surface of the conductive material. Apparatus and additional methods are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.