Field effect transistor and method of manufacturing the same
US11935790B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2021 |
| Grant date | Mar 19, 2024 |
| Priority date | — |
| Expiry date | Apr 1, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/258
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are a field effect transistor and a method of manufacturing the same. The field effect transistor includes a source electrode on a substrate, a drain electrode separated from the source electrode, and channels connected between the source electrode and the drain electrode, gate insulating layers, and a gate electrode. The channels may have a hollow closed cross-sectional structure when viewed in a first cross-section formed by a plane across the source electrode and the drain electrode in a direction perpendicular to the substrate. The gate insulating layers may be in the channels. The gate electrode may be insulated from the source electrode and the drain electrode by the gate insulating layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.