Patent · US Active

Method for BEOL metal to dielectric adhesion

US11942324B2 · kind B2 · utility

0Cited by

3References

18Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Qintao Zhang · Mount Kisco, US
Jun Lu · Shanghai, CN
Ting Cai · Ann Arbor, US
Ma Ning · Shanghai, CN
Weiye He · Shanghai, CN
Jian Kang · Xuzhou, CN

Key dates

Filing date	Jun 10, 2020
Grant date	Mar 26, 2024
Priority date	—
Expiry date	Oct 27, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH01L23/53266
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of promoting adhesion between a dielectric layer of a semiconductor device and a metal fill deposited within a trench in the dielectric layer, including performing an ion implantation process wherein an ion beam formed of an ionized dopant species is directed into the trench at an acute angle relative to a top surface of the dielectric layer to form an implantation layer in a sidewall of the trench, and depositing a metal fill in the trench atop an underlying bottom metal layer, wherein the metal fill adheres to the sidewall.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.