Jun Lu
15Patents
5h-index
32Co-inventors
66Inventor score
Filing activity: Feb 19, 1999 → Nov 9, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6207964A | Continuously variable aperture for high-energy ion implanter | Electricity | 28 | Expired |
| US6194734A | Method and system for operating a variable aperture in an ion implanter | Electricity | 16 | Expired |
| US8129695B2 | System and method for controlling deflection of a charged particle beam within a graded electrostatic lens | Electricity | 13 | Active |
| US9978554B1 | Dual cathode ion source | Electricity | 5 | Active |
| US7166854B2 | Uniformity control multiple tilt axes, rotating wafer and variable scan velocity | Electricity | 5 | Expired |
| US7161161B2 | Uniformity control using multiple fixed wafer orientations and variable scan velocity | Electricity | 3 | Expired |
| US10446372B2 | Dual cathode ion source | Electricity | 2 | Active |
| US11201057B2 | Techniques and apparatus for anisotropic stress compensation in substrates using ion implantation | Electricity | 1 | Active |
| US11569063B2 | Apparatus, system and method for energy spread ion beam | Electricity | 1 | Active |
| US11574796B1 | Dual XY variable aperture in an ion implantation system | Electricity | 0 | Active |
| US11875995B2 | Techniques and apparatus for anisotropic stress compensation in substrates using ion implantation | Electricity | 0 | Active |
| US11114277B2 | Dual cathode ion source | Electricity | 0 | Active |
| US11942324B2 | Method for BEOL metal to dielectric adhesion | Electricity | 0 | Active |
| US12347687B2 | Etch rate modulation of FinFET through high-temperature ion implantation | Electricity | 0 | Active |
| US10741361B2 | Dual cathode ion source | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.