Low thermal budget dielectric for semiconductor devices
US11942358B2 · kind B2 · utility
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17References
20Claims
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Key dates
| Filing date | Mar 12, 2021 |
| Grant date | Mar 26, 2024 |
| Priority date | — |
| Expiry date | Nov 24, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/013
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure describes a method of forming low thermal budget dielectrics in semiconductor devices. The method includes forming, on a substrate, first and second fin structures with an opening in between, filling the opening with a flowable isolation material, treating the flowable isolation material with a plasma, and removing a portion of the plasma-treated flowable isolation material between the first and second fin structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.