Patent · US Active

Embedded structure, manufacturing method thereof and substrate

US11942465B2 · kind B2 · utility

0Cited by
0References
8Claims
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Assignee

Inventors

Key dates

Filing dateJul 29, 2021
Grant dateMar 26, 2024
Priority date
Expiry dateJul 13, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2224/2101
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Disclosed is a manufacturing method for an embedded structure. The method includes: preparing a temporary carrier board; preparing a second circuit layer on at least one of the upper surface and the lower surface of the temporary carrier board, and preparing a first dielectric layer to cover the second circuit layer; patterning and curing the first dielectric layer to form a cavity, mounting a device in the cavity, and performing hot-curing, wherein a surface of the device provided with a terminal faces an opening of the cavity; and preparing a second dielectric layer, wherein the device is embedded in the second dielectric layer, and a surface of the second dielectric layer is higher than a surface of the terminal by a preset value.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.