Nanosheet semiconductor device and method for manufacturing the same
US11942550B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Feb 24, 2021 |
| Grant date | Mar 26, 2024 |
| Priority date | — |
| Expiry date | May 23, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/364
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a nanosheet semiconductor device includes forming a poly gate on a nanosheet stack which includes at least one first nanosheet and at least one second nanosheet alternating with the at least one first nanosheet; recessing the nanosheet stack to form a source/drain recess proximate to the poly gate; forming an inner spacer laterally covering the at least one first nanosheet; and selectively etching the at least one second nanosheet.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.