Patent · US Active

Magnetic tunnel junction device with minimum stray field

US11944013B2 · kind B2 · utility

1Cited by

7References

9Claims

0Family size

Assignee

International Business Machines Corporation · US

Inventors

Heng Wu · Guilderland, US
Dimitri Houssameddine · Sunnyvale, US
Huai Huang · Clifton Park, US
Tianji Zhou · Albany, US

Key dates

Filing date	Sep 17, 2021
Grant date	Mar 26, 2024
Priority date	—
Expiry date	May 11, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH10N50/85
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A second BEOL layer including a via dielectric layer surrounding a via including an upper metal stud and a lower metal stud separated by a liner, and a magnetic tunnel junction (MTJ) stack aligned above the via. A first back end of line (BEOL) layer including a BEOL dielectric layer surrounding a BEOL metal layer, a second BEOL layer including a via dielectric layer surrounding a via including an upper metal stud and a lower metal stud separated by a liner, a magnetic tunnel junction (MTJ) stack aligned above the via. Forming a via dielectric layer as a second back end of line (BEOL) layer, an opening, a lower metal stud in the opening, a liner on the lower metal stud and on exposed side surfaces of the opening, an upper metal stud in remaining portions of the opening, and forming a magnetic tunnel junction (MTJ) stack aligned above.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.