Method for forming hardmask formation by hybrid materials in semiconductor device
US11948843B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2021 |
| Grant date | Apr 2, 2024 |
| Priority date | — |
| Expiry date | Apr 2, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/013
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate, first and second semiconductor strips, a dummy fin structure, first and second channel layers, a gate structure, and crystalline and amorphous hard mask layers. The first and second semiconductor strips extend upwardly from the substrate and each has a length extending along a first direction. The dummy fin structure is laterally between the first and second semiconductor strips. The first and second channel layers extend in the first direction above the first and second semiconductor strips and are arranged in a second direction substantially perpendicular to the substrate. The crystalline hard mask layer extends upwardly from the dummy fin structure and has an U-shaped cross section. The amorphous hard mask layer is in the crystalline hard mask layer. The amorphous hard mask layer has an U-shaped cross section conformal to the U-shaped cross section of the crystalline hard mask layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.