Metal gate structures and methods of fabricating the same in field-effect transistors
US11949000B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 2022 |
| Grant date | Apr 2, 2024 |
| Priority date | — |
| Expiry date | Jul 27, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A method includes forming a dummy gate stack over a fin protruding from a semiconductor substrate, forming gate spacers on sidewalls of the dummy gate stack, forming source/features over portions of the fin, forming a gate trench between the gate spacers, which includes trimming top portions of the gate spacers to form a funnel-like opening in the gate trench, and forming a metal gate structure in the gate trench. A semiconductor structure includes a fin protruding from a substrate, a metal gate structure disposed over the fin, gate spacers disposed on sidewalls of the metal gate structure, where a top surface of each gate spacer is angled toward the semiconductor fin, a dielectric layer disposed over the top surface of each gate spacer, and a conductive feature disposed between the gate spacers to contact the metal gate structure, where sidewalls of the conductive feature contact the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.