Lateral bipolar transistors with gate structure aligned to extrinsic base
US11949004B2 · kind B2 · utility
0Cited by
12References
14Claims
0Family size
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Key dates
| Filing date | Nov 23, 2021 |
| Grant date | Apr 2, 2024 |
| Priority date | — |
| Expiry date | Dec 4, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/364
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. The structure includes: an extrinsic base region; an emitter region on a first side of the extrinsic base region; a collector region on a second side of the extrinsic base region; and a gate structure comprising a gate oxide and a gate control in a same channel region as the extrinsic base region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.