Fin field effect transistor (FinFet) device structure and method for forming the same
US11949014B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2022 |
| Grant date | Apr 2, 2024 |
| Priority date | — |
| Expiry date | Apr 18, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A FinFET device structure and method for forming the same are provided. The FinFET device structure includes a first, second, third and fourth fin structures over a substrate. The first and the second fin structures have a first and a second sidewall surfaces respectively. The third and the fourth fin structure have a third and a fourth sidewall surfaces respectively. The first and the second sidewall surfaces extend along a first direction. The third and the fourth sidewall surfaces extend along a second direction different from the first direction. A first and a second isolation structures are over the substrate and surrounding the first and the second fin structure and surrounding the third and the fourth fin structures respectively. A distance between top portions of the third and the fourth sidewall surfaces is greater than that between top portions of the first and the second sidewall surfaces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.