Integrated circuit comprising a single photon avalanche diode and corresponding manufacturing method
US11949035B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 9, 2021 |
| Grant date | Apr 2, 2024 |
| Priority date | — |
| Expiry date | Jun 7, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/148
Abstract
A single photon avalanche diode (SPAD) includes a PN junction in a semiconductor well doped with a first type of dopant. The PN junction is formed between a first region doped with the first type of dopant and a second region doped with a second type of dopant opposite to the first type of dopant. The first doped region is shaped so as to incorporate local variations in concentration of dopants that are configured, in response to a voltage between the second doped region and the semiconductor well that is greater than or equal to a level of a breakdown voltage of the PN junction, to generate a monotonic variation in the electrostatic potential between the first doped region and the semiconductor well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.