Semiconductor device and method for fabricating the same
US11950513B2 · kind B2 · utility
1Cited by
4References
10Claims
0Family size
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Key dates
| Filing date | Jul 5, 2022 |
| Grant date | Apr 2, 2024 |
| Priority date | — |
| Expiry date | Jul 5, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a first metal interconnection and a second metal interconnection in the first IMD layer; forming a channel layer on the first metal interconnection and the second metal interconnection; forming a magnetic tunneling junction (MTJ) stack on the channel layer; and removing the MTJ stack to form a MTJ.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.