Methods of forming structures, semiconductor processing systems, and semiconductor device structures
US11959173B2 · kind B2 · utility
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12References
18Claims
0Family size
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Key dates
| Filing date | Mar 17, 2022 |
| Grant date | Apr 16, 2024 |
| Priority date | — |
| Expiry date | Apr 2, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6757
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming structure includes providing a substrate in a reaction chamber, forming a first layer overlaying the substrate, and forming a second layer onto the first layer. Temperature of the first layer is controlled during the forming of the first layer using infrared electromagnetic radiation emitted by the first layer. Temperature of the second layer is controlled during the forming of the second layer using infrared electromagnetic radiation emitted by the second layer. Semiconductor device structures and semiconductor processing systems are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.