Shunt door for magnets in plasma process chamber
US11959174B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2020 |
| Grant date | Apr 16, 2024 |
| Priority date | — |
| Expiry date | Feb 6, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32669
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments described herein relate to magnetic and electromagnetic systems and a method for controlling the density profile of plasma generated in a process volume of a PECVD chamber to affect deposition profile of a film on a substrate and/or facilitate chamber cleaning after processing. In one embodiment, a system is disclosed that includes a rotational magnetic housing disposed about an exterior sidewall of a chamber. The rotational magnetic housing includes a plurality of magnets coupled to a sleeve that are configured to travel in a circular path when the rotational magnetic housing is rotated around the chamber, and a plurality of shunt doors movably disposed between the chamber and the sleeve, wherein each of the shunt doors are configured to move relative to the magnets.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.