Bhaskar Kumar
26Patents
2h-index
47Co-inventors
53Inventor score
Filing activity: Jun 9, 2009 → Jun 27, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8846437B2 | High efficiency thin film transistor device with gallium arsenide layer | Emerging Cross-Sectional Technologies | 9 | Active |
| US9646876B2 | Aluminum nitride barrier layer | Electricity | 8 | Active |
| US9252392B2 | Thin film encapsulation-thin ultra high barrier layer for OLED application | Electricity | 2 | Active |
| US10074559B1 | Selective poreseal deposition prevention and residue removal using SAM | Electricity | 2 | Active |
| US11488811B2 | Chucking process and system for substrate processing chambers | Electricity | 1 | Active |
| US9793108B2 | Interconnect integration for sidewall pore seal and via cleanliness | Electricity | 1 | Active |
| US11069514B2 | Remote capacitively coupled plasma source with improved ion blocker | Electricity | 1 | Active |
| US10748797B2 | Plasma parameters and skew characterization by high speed imaging | Electricity | 1 | Active |
| US11721545B2 | Method of using dual frequency RF power in a process chamber | Electricity | 1 | Active |
| US11699585B2 | Methods of forming hardmasks | Electricity | 0 | Active |
| US11996273B2 | Methods of seasoning process chambers | Electricity | 0 | Active |
| US11120976B2 | Apparatus and methods for removing contaminant particles in a plasma process | Electricity | 0 | Active |
| US10892143B2 | Technique to prevent aluminum fluoride build up on the heater | Electricity | 0 | Active |
| US11959174B2 | Shunt door for magnets in plasma process chamber | Electricity | 0 | Active |
| US11545376B2 | Plasma parameters and skew characterization by high speed imaging | Electricity | 0 | Active |
| US11515191B2 | Graded dimple height pattern on heater for lower backside damage and low chucking voltage | Electricity | 0 | Active |
| US12142468B2 | Stress treatments for cover wafers | Electricity | 0 | Active |
| US10790121B2 | Plasma density control on substrate edge | Electricity | 0 | Active |
| US8895842B2 | High quality TCO-silicon interface contact structure for high efficiency thin film silicon solar cells | Emerging Cross-Sectional Technologies | 0 | Active |
| US10688538B2 | Aluminum fluoride mitigation by plasma treatment | Electricity | 0 | Active |
| US10714319B2 | Apparatus and methods for removing contaminant particles in a plasma process | Electricity | 0 | Active |
| US9780223B2 | Gallium arsenide based materials used in thin film transistor applications | Emerging Cross-Sectional Technologies | 0 | Active |
| US12020911B2 | Chucking process and system for substrate processing chambers | Electricity | 0 | Active |
| US12106958B2 | Method of using dual frequency RF power in a process chamber | Electricity | 0 | Active |
| US11859275B2 | Techniques to improve adhesion and defects for tungsten carbide film | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.