FinFET varactor quality factor improvement
US11961836B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Sep 28, 2018 |
| Grant date | Apr 16, 2024 |
| Priority date | — |
| Expiry date | Apr 8, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
Abstract
An integrated circuit structure comprises one or more fins extending above a surface of a substrate over an N-type well. A gate is over and in contact with the one or more fins. A second shallow N-type doping is below the gate and above the N-type well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.