Inventor · Portland, OR, US

Mark Armstrong

51Patents
9h-index
65Co-inventors
81Inventor score

Filing activity: Apr 23, 1992 → Nov 30, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US6870179B2 Increasing stress-enhanced drive current in a MOS transistor Electricity 32 Expired
US9484447B2 Integration methods to fabricate internal spacers for nanowire devices Performing Operations; Transporting 30 Active
US7658568B1 Interior protectant applicator Performing Operations; Transporting 15 Active
US7045408B2 Integrated circuit with improved channel stress properties and a method for making it Electricity 14 Expired
US6800887B1 Nitrogen controlled growth of dislocation loop in stress enhanced transistor Electricity 12 Expired
US5331696A Removable covers for waterbed rails Human Necessities 11 Expired
US6390940B1 Basketball game, apparatus and method of play Human Necessities 10 Expired
US9859368B2 Integration methods to fabricate internal spacers for nanowire devices Performing Operations; Transporting 10 Active
US7312485B2 CMOS fabrication process utilizing special transistor orientation Electricity 9 Expired
US7226824B2 Nitrogen controlled growth of dislocation loop in stress enhanced transistor Electricity 9 Expired
US5163197A Removable covers for waterbed rails Human Necessities 9 Expired
US7854393B2 Air freshener Performing Operations; Transporting 8 Active
US6343483B1 Cooling apparatus and method for vending machines Mechanical Engineering; Lighting; Heating 7 Expired
US7187057B2 Nitrogen controlled growth of dislocation loop in stress enhanced transistor Electricity 7 Expired
USD482919S1 Container for brush General 6 Expired
US7338847B2 Methods of manufacturing a stressed MOS transistor structure Electricity 5 Expired
US6838329B2 High concentration indium fluorine retrograde wells Electricity 4 Expired
US5440630A Telephone receiver with electrostatic discharge prevention Electricity 4 Expired
US9825130B2 Leakage reduction structures for nanowire transistors Electricity 4 Active
US7101765B2 Enhancing strained device performance by use of multi narrow section layout Emerging Cross-Sectional Technologies 4 Expired
US7482670B2 Enhancing strained device performance by use of multi narrow section layout Emerging Cross-Sectional Technologies 4 Active
US7129533B2 High concentration indium fluorine retrograde wells Electricity 3 Expired
US11302790B2 Fin shaping using templates and integrated circuit structures resulting therefrom Electricity 2 Active
US7888710B2 CMOS fabrication process utilizing special transistor orientation Electricity 2 Active
USD1011182S1 Mounting clip General 2 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.